Epitaxial growth of YBa2Cu3O7-x thin films.

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

EFFECTS OF EPITAXIAL STRAIN ON THE GROWTH MECHANISM OF YBa2Cu3O7−x THIN FILMS IN [YBa2Cu3O7−x/PrBa2Cu3O7−x] SUPERLATTICES

We report on the growth mechanism of YBa2Cu3O7−x. Our study is based on the analysis of ultrathin, YBa2Cu3O7−x layers in c-axis oriented YBa2Cu3O7−x / PrBa2Cu3O7 superlattices. We have found that the release of epitaxial strain in very thin YBCO layers triggers a change in the dimensionality of the growth mode. Ultrathin, epitaxially strained, YBCO layers with thickness below 3 unit cells grow ...

متن کامل

Epitaxial growth of thin films

The term ‘epitaxial’ is applied to a film grown on top of the crystalline substrate in ordered fashion that atomic arrangement of the film accepts crystallographic structure of the substrate. Epitaxial growth is one of the most important techniques to fabricate various ‘state of the art’ electronic and optical devices. Modern devices require very sophisticated structure, which are composed of t...

متن کامل

Epitaxial Growth of Thin Films

This chapter gives an introduction to the epitaxial growth of thin films on solid substrates. The term epitaxy refers to the growth of a crystalline layer on (epi) the surface of a crystalline substrate, where the crystallographic orientation of the substrate surface imposes a crystalline order (taxis) onto the thin film. This implies that film elements can be grown, up to a certain thickness, ...

متن کامل

MOCVD growth of non-epitaxial and epitaxial ZnS thin films

Thin films of ZnS have been deposited by MOCVD on both BaTa206/ITO/glass and Si substrates. Diethylzinc (DEZn) and H2S are used for deposition on substrates heated to the 250-400°C temperature range. The microstructure and properties of ZnS films were studied by X-ray diffractometry (XRD), ultraviolet/visible spectrophotometry (UVS) and scanning electron microscopy (SEM). Films prepared on BaTa...

متن کامل

Penetration depth measurement in high quality YBa2Cu3O7−x thin films

The parallel plate resonator method has been used for measuring high quality YBa2Cu3O7−x (YBCO) thin films, which have low temperature residual losses comparable to those previously obtained in single crystals. The surface resistance and the real part of the conductivity show a non-monotonic behaviour with a broad peak around 45 K. The penetration depth and the real part of the conductivity var...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of the Japan Society of Powder and Powder Metallurgy

سال: 1988

ISSN: 0532-8799,1880-9014

DOI: 10.2497/jjspm.35.870